Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

Poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs were obtained using Ag-assisted chemical etching process. Scanning Electron Microscopy (SEM) images reveal a vertical alignment of the as well formation MEH-PPV their surfaces. The presence polymer surface confirmed Energy-dispersive X-ray (EDX). Current–Voltage (I–V) measurements performed for electrical characterization Ag/MEH-PPV/SiNWs diodes before and after annealing. ideality factor (n), barrier height (φb) series resistance (RS) are determined Cheung diode parameters strongly affected immersion duration in solution annealing temperature. rectification rate increased deposition. temperature has great influence thermal activation carriers at Ag/MEH-PPV MEH-PPV/SiNWs interfaces. I–V characteristics show an ohmic character temperatures above 250 °C. such equivalent carrier concentration (ND) built-in voltage (Vb) other values φb calculated from Capacitance–Voltage (C–V) measurements.